Advances in Semiconductor Nanostructures

<p>Chapter I. Low-Dimensional Systems: Theory and Experiment<br>1.1. Theory of the two-dimensional electronic systems <br>A.V. Chaplik, M.V. Entin  <br>1.2. Two-dimensional semimetal in HgTe-based quantum wells<br>Z.D.Kvon, E.B.Olshanetsky, D.A.Kozlov, N.N.Mikhailov, S.A.Dvoretsky <br>1.3. Nonlinear two-dimensional electron conductivity at high filling factors <br>A.A.Bykov, S.A. Vitkalov <br>1.4. Silicon-based nanoheterostructures with quantum dots<br>A.V.Dvurechenskii, A.I.Yakimov<br>1.5. Electron transport: from nanostructures to nanoelectromechanical systems<br>A.G.Pogosov, M.V. Budantsev, A.A. Shevyrin, E.Yu.Zhdanov, D.A.Pohabov<br>1.6. Modeling of quantum transport and single-electron charging in GaAs/AlGaAs-nanostructures <br>O.A.Tkachenko, V.A.Tkachenko, Z.D.Kvon, D.V.Scheglov, A.L.Aseev<br>1.7. Spectroscopy of vibrational states in low-dimensional semiconductor systems <br>A.G.Milekhin, D.R.T. Zahn</p> <p>Chapter II. Surface, Interface, Epitaxy <br>2.1. Atomic processes on silicon surface<br>A.V. Latyshev, L.I. Fedina, S.S. Kosolobov, S.V. Sitnikov, D.I. Rogilo, E.E. Rodyakina, D.A. Nasimov, D.V. Sheglov, A.L. Aseev<br>2.2. Atomic structure of low-dimensional semiconductor heterosystems <br>A.K.Gutakovsky, A.V.Latyshev, A.L.Aseev<br>2.3. Formation of GaAs step-terraced surfaces by annealing in equilibrium conditions <br>V.L.Alperovich, I.O.Ahundov, D.M.Kazantsev, N.S.Rudaya, E.E.Rodiakina, A.S.Kozhukhov, D.V.Shcheglov, A.N.Karpov, N.L.Schwartz, A.S.Terekhov, A.V. Latyshev<br>2.4. Atomic Processes in the Formation Strained Ge Layers on Si (111) and (001) Substrates within Stransky-Krastanov Growth Mechanism<br>S.A. Teys<br>2.5. Molecular-beam epitaxy of CdxHg1-xTe<br>Yu.G.Sidorov, A.P.Antsiferov, V.S.Varavin, S.A.Dvoretsky, N.N.Mikhailov, M.V.Yakushev, I.V.Sabinina, V.G.Remesnik, D.G.Ikusov, I.N.Uzhakov, G.Yu.Sidorov, V.D.Kuzmin, S.V.Rihlicky, V.A.Shvets, A.S.Mardezhov, E.V.Spesivtsev, A.K.Gutakovsky, A.V.Latyshev<br>2.6. Surface morphologies obtained by Ge deposition on bare and oxidized silicon surfaces at different temperatures A.A.Shklyaev, K.N.Romaniuk, S.S.Kosolobov, A.V.Latyshev<br>2.7. Monte-Carlo simulation of semiconductor nanostructures growth  <br>I.G.Neizvestny, N.L.Shwartz</p> <p>Chapter III. Radiation Effects on Semiconductor Structures <br>3.1. The Energy Pulse Oriented Crystallization Phenomenon in Solids (Laser Annealing)<br>A.V.Dvurechenskii<br>3.2. Universality of the {113} habit plane in Si for mixed aggregation of vacancies and self-interstitial atoms provided by topological bond defect formation <br>L.I.Fedina, A.K.Gutakovsky, A.V.Latyshev, A.L.Aseev<br>3.4. Silicon-on-insulator structures produced by ion-beam synthesis and hydrogen transfer<br>I.E.Tyschenko, V.P.Popov</p> <p>Chapter IV. Electronic Advanced Materials <br>4.1. Superminiature radiation sources based on semiconductor nanostructures  <br>V.A.Haisler, A.V.Haisler, I.A.Derebezov, A.S.Yaroshevich, A.K.Bakarov, D.V.Dmitriev, A.K.Kalagin, A.I.Toropov, M.M.Kachanova, Yu.A.Zhivodkov, T.A.Gavrilova, A.S.Medvedev, L.A.Nenasheva, O.I.Semenova, K.V.Grachev, V.K.Sandyrev, A.S.Kozhukhov, D.V.Shcheglov, D.B.Tretyakov, I.I.Beterov, V.M.Entin, I.I.Ryabtsev, A.V.Latyshev, A.L.Aseev<br>4.2. Three-dimensional systems and nanostructures: technology, physics and applications <br>V.Ya.Prinz<br>4.3. The nature of defects responsible for transport in a hafnia-based resistive random access memory element <br>D.R.Islamov, T.V.Perevalov, V.A.Gritsenko, V.Sh.Aliev, A.A.Saraev, V.V. Kaichev, M.V.Ivanova, M.V.Zamo1ryanskaya, A. Chin<br>4.4. The optical multiplexor based on a multiple of connected waveguides in silicon-on-insulator structures <br>A.V.Tsarev</p>