Metal-Dielectric Interfaces in Gigascale Electronics

Name: Metal-Dielectric Interfaces in Gigascale Electronics
Author: Ming He

Thermal and Electrical Stability

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Gebonden, 149 blz. | Engels

Springer New York | 2012e druk, 2011

ISBN13: 9781461418115

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Springer New York 2012e druk, 2011 9781461418115

Onderdeel van serie Springer Series in Materials Science

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Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the authors present the basic science underlying the thermal and electrical stability of metal-dielectric interfaces and its relationship to the operation of advanced interconnect systems in gigascale electronics. Interface phenomena, including chemical reactions between metals and dielectrics, metallic-atom diffusion, and ion drift, are discussed based on fundamental physical and chemical principles. Schematic diagrams are provided throughout the book to illustrate interface phenomena and the principles that govern them. Metal-Dielectric Interfaces in Gigascale Electronics provides a unifying approach to the diverse and sometimes contradictory test results that are reported in the literature on metal-dielectric interfaces. The goal is to provide readers with a clear account of the relationship between interface science and its applications in interconnect structures. The material presented here will also be of interest to those engaged in field-effect transistor and memristor device research, as well as university researchers and industrial scientists working in the areas of electronic materials processing, semiconductor manufacturing, memory chips, and IC design.

Specificaties

ISBN13:9781461418115

Taal:Engels

Bindwijze:gebonden

Aantal pagina's:149

Uitgever:Springer New York

Druk:2012

Serie:Springer Series in Materials Science

Inhoudsopgave

Preface1. Introduction 1.1 Metal-dielectric interfaces in IC chips 1.2 Materials choices 1.3 Thermal and electrical stability2. Metal-Dielectric Diffusion Processes: Fundamentals 2.1 Thermal diffusion 2.2 Field-enhanced ion drift 2.3 Thermodynamics and chemical interactions 2.4 Summary3. Experimental Techniques 3.1 Test structures 3.2 Electrical measurements 3.3 Elemental characterizations 3.4 Summary4. Al-Dielectric Interfaces 4.1 Al-SiO2 interface 4.2 Al/low-k dielectric interfaces 4.3 Chemical identification of Al-ion drift 4.4 SiO2 as a dielectric barrier against Al-ion drift 4.5 Summary5. Cu-Dielectric Interfaces 5.1 Stability of Cu-SiO2 in an oxygen-free environment 5.2 Instability of Cu-SiO2 in an oxygen-containing environment 5.3 Origin of Cu ions in SiO2 5.4 Cu ion diffusivity inside SiO2 5.5 Cu ions in porous low-k dielectrics 5.6 Pre-cleaning of Cu/low-k dielectrics 5.7 Cu atoms in porous low-k dielectrics 5.8 Dielectrics containing no oxygen 5.9 Summary6. Barrier Metal-Dielectric Interfaces 6.1 Barrier metals on SiO2 6.2 Barrier metals on low-k dielectrics7. Self-Forming Barriers 7.1 General considerations 7.2 Cu(Al) self-forming barrier 7.3 Cu(Mg) self-forming barrier 7.4. Cu(Mn) self-forming barrier 7.5 Refractory metal self-forming barrier alloys 7.6 Summary8. Kinetics of Ion Drift 8.1 Ion distribution simulations 8.2 Leakage current 8.3 C-V characteristics 8.4 Summary9. Time-Dependent Dielectric Breakdown (TDDB) and Future Directions 9.1 Time-dependent dielectric breakdown (TDDB) 9.2 Dielectric pore-sealing 9.3 Resistance-switching memory 9.4 Summary

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