Physics and Chemistry of III-V Compound Semiconductor Interfaces

1. III-V Semiconductor Surface Interactions.- 1. Introduction.- 2. Interface States and Schottky Barriers.- 3. Clean Surfaces of III-V Semiconductors.- 3.1. Crystallographic Structures of Surface and Bulk.- 3.2. Bulk and Surface Electronic States.- 3.3. Surface Imperfections and Defects.- 4. Adsorption of Gases on Clean III-V Semiconductors.- 4.1. General Introduction.- 4.2. Oxygen Adsorption.- 4.3. Chlorine on III-V Semiconductors.- 4.4. H2, H2S, and H2O Adsorption.- 5. Metal Films on Clean III-V Surfaces.- 5.1. General Introduction.- 5.2. Interactions at Very Small Coverages.- 5.2.1. Cesium on GaAs (110).- 5.2.2. Al, Ga, and In on GaAs and InP.- 5.2.3. Au and Ag on GaAs and InP.- 5.3. Interactions with Thick Metal Films.- 6. The Electrical Nature of Intimate Interfaces.- 6.1. Introduction.- 6.2. Abrupt Boundary Models.- 6.3. Nonabrupt Boundary Theories.- 7. Conclusions.- References.- 2. Schottky Diodes and Ohmic Contacts for the III-V Semiconductors.- 1. Introduction.- 2. Electrical Properties of Metal-Semiconductor Contacts.- 2.1. Classical Models of the Interface.- 2.1.1. Schottky Model.- 2.1.2. Bardeen Model.- 2.1.3. General Case.- 2.2. Mechanisms of Barrier Formation.- 2.3. Current Transport.- 2.3.1. Thermionic Emission: Rectification.- 2.3.2. Field Emission and Thermionic-Field Emission: Ohmic Behavior.- 2.4. Capacitance of a Schottky Diode.- 3. Schottky-Diode Technology.- 3.1. Measurement of ?B.- 3.1.1. Photoresponse Measurements.- 3.1.2. Current-Voltage Measurements.- 3.1.3. Capacitance-Voltage Measurements.- 3.2. Barrier Energies.- 3.2.1. GaAs.- 3.2.2. InP.- 3.2.3. Other Binary Compounds.- 3.2.4. III-V Alloys.- 4. Ohmic-Contact Technology.- 4.1. Methods of Forming Ohmic Contacts.- 4.1.1. Diffusion and Ion Implantation.- 4.1.2. Epitaxy.- 4.1.3. Alloying.- 4.1.4. Heterojunctions.- 4.2. Measurement of rc.- 4.2.1. Cox-Strack Method.- 4.2.2. Four-Point Method.- 4.2.3. Shockley Technique.- 4.2.4. Transmission-Line Model.- 4.3. Alloyed Ohmic Contacts.- 4.3.1. GaAs.- 4.3.2. InP.- 4.3.3. Other Binary Compounds.- 4.3.4. III-V Alloys.- References.- 3. The Deposited Insulator/III-V Semiconductor Interface.- 1. Introduction.- 2. General Overview of the Deposited Insulator/III-V Interface.- 3. Choice of Insulator and Deposition Technique.- 4. Interfacial Properties.- 4.1. Interfacial Reactions.- 4.2. Interfacial Oxide.- 4.3. Interdiffusion and Impurity Incorporation.- 4.4. Surface Evaporation.- 4.5. Energy of the Depositing Molecules.- 4.6. Interfacial Trapping and Instabilities.- 5. Experimental Results.- 5.1. InSb.- 5.2. GaAs.- 5.3. InP.- 6. Concluding Remarks.- References.- 4. Electrical Properties of Insulator-Semiconductor Interfaces on III-V Compounds.- 1. Introduction.- 2. Theoretical Background.- 2.1. Differential Surface Capacitance.- 2.2. Surface States.- 2.3. Surface Conductance.- 3. Gallium Arsenide.- 3.1. Chemically Clean Surface.- 3.2. Native Oxides.- 3.3. Deposited Insulators.- 4. Indium Antimonide.- 5. Indium Phosphide.- 5.1. Native Oxides.- 5.1.1. Thermally Grown Oxides.- 5.1.2. Anodically Formed Oxides.- 5.2. Deposited Dielectrics.- 6. Indium Arsenide.- 7. Gallium Phosphide.- 8. Gallium Arsenide Phosphide.- 9. Whither Surface States.- 10. Low-Temperature Deposition of Dielectric Layers.- 11. Conclusion.- References.- 5. III-V Inversion-Layer Transport.- 1. Introduction.- 2. Quantization.- 2.1. Surface Subbands.- 2.2. Approximate Solutions.- 2.3. Effects of Nonparabolicity.- 3. Surface Scattering Mechanisms.- 3.1. Coulomb Scattering.- 3.2. Surface Roughness Scattering.- 4. Phonon Scattering.- 4.1. The Acoustic Interaction.- 4.2. Scattering by Polar Modes.- 4.3. Remote Optical Phonons.- 4.4. High Fields.- 5. Experimental Results.- 5.1. Subband Structure.- 5.2. Transport Measurements.- Summary.- References.- 6. Interfacial Constraints on III-V Compounds MIS Devices.- 1. Introduction.- 2. Dielectric-Semiconductor Interfacial Phenomena.- 2.1. Trapping.- 2.2. Scattering.- 2.3. Recombination.- 3. MIS-Device Characteristics.- 3.1. Field-Effect Transistors.- 3.2. Charge-Coupled Devices.- 3.3. Integrated Circuits.- 3.4. Optical Devices.- 3.5. Memory Cells.- 4. Device Results.- 4.1. Gallium Arsenide.- 4.2. Indium Phosphide.- 4.3. Other Binary Compounds.- 4.4. Ternary and Quaternary Alloys.- 5. Epilogue.- References.- 7. Oxide/III-V Compound Semiconductor Interfaces.- 1. Introduction.- 1.1. Initial Oxidation.- 1.2. Thermodynamics.- 1.3. Vapor Pressure.- 2. The Chemically Cleaned Surface.- 2.1. Polishing and Exposure to Air.- 2.2. Chemical Etching and Growth of a Chemical Oxide.- 3. Thermal Oxides.- 3.1. General Overview.- 3.2. InP.- 3.3. GaP.- 3.4. GaAs, GaSb, and InSb.- 3.5. InAs.- 3.6. In0.53Ga0.47As.- 4. Anodic Oxides.- 4.1. Anodic Oxidation Process.- 4.2. Anodization Parameters.- 4.2.1. The Electrolyte.- 4.2.2. Viscosity.- 4.2.3. Current Density.- 4.2.4. pH.- 4.3. Initial Growth.- 4.4. Chemical Composition of Anodic Oxides and Interfaces.- 4.4.1. GaAs.- 4.4.2. InP.- 4.4.3. GaP.- 4.4.4. InAs.- 4.4.5. GaSb.- 4.4.6. InSb.- 4.5. Thermal Annealing of the Anodic Oxides.- 5. Plasma-Grown Oxide.- References.