, ,

Doping Engineering for Front-End Processing: Volume 1070

Specificaties
Gebonden, 319 blz. | Engels
Cambridge University Press | e druk, 2008
ISBN13: 9781605110400
Rubricering
Juridisch :
Cambridge University Press e druk, 2008 9781605110400
Onderdeel van serie MRS Proceedings
€ 111,99
Levertijd ongeveer 9 werkdagen
Gratis verzonden

Samenvatting

Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.

Specificaties

ISBN13:9781605110400
Taal:Engels
Bindwijze:Gebonden
Aantal pagina's:319

Inhoudsopgave

Preface; Part I. Ultra Shallow Junctions I; Part II. Shallow Junction Contacting; Part III. Poster Session; Part IV. Ultra Shallow Junctions II; Part V. Solid Phase Epitaxial Regrowth; Part VI. Modeling and Simulation; Author index; Subject index.

Net verschenen

€ 111,99
Levertijd ongeveer 9 werkdagen
Gratis verzonden

Rubrieken

    Personen

      Trefwoorden

        Doping Engineering for Front-End Processing: Volume 1070