Silicon Technologies

<p>Preface xi<br />Annie BAUDRANT</p>
<p>Chapter 1. Silicon and Silicon Carbide Oxidation 1<br />Jean–Jacques GANEM and Isabelle TRIMAILLE</p>
<p>1.1. Introduction 1</p>
<p>1.2. Overview of the various oxidation techniques 3</p>
<p>1.3. Some physical properties of silica 17</p>
<p>1.4. Equations of atomic transport during oxidation 28</p>
<p>1.5. Is it possible to identify the transport mechanisms taking place during oxidation? 35</p>
<p>1.6. Transport equations in the case of thermal oxidation 48</p>
<p>1.7. Deal and Grove theory of thermal oxidation 53</p>
<p>1.8. Theory of thermal oxidation under water vapor of silicon 67</p>
<p>1.9. Kinetics of growth in O2 for oxide films &lt; 30 nm 72</p>
<p>1.10. Fluctuations of the oxidation constants under experimental conditions 84</p>
<p>1.11. Conclusion 92</p>
<p>1.12. Bibliography 92</p>
<p>Chapter 2. Ion Implantation 103<br />Jean–Jacques GROB</p>
<p>2.1. Introduction 103</p>
<p>2.2. Ion implanters 105</p>
<p>2.3. Ion range 111</p>
<p>2.4. Creation and healing of the defects 124</p>
<p>2.5. Applications in traditional technologies and new tendencies 136</p>
<p>2.6. Conclusion 147</p>
<p>2.7. Bibliography 147</p>
<p>Chapter 3. Dopant Diffusion: Modeling and Technological Challenges 155<br />Daniel MATHIOT</p>
<p>3.1. Introduction 155</p>
<p>3.2. Diffusion in solids 157</p>
<p>3.3. Dopant diffusion in single–crystal silicon 176</p>
<p>3.4. Examples of associated engineering problems 191</p>
<p>3.5. Dopant diffusion in germanium 196</p>
<p>3.6. Conclusion 201</p>
<p>3.7. Bibliography 201</p>
<p>Chapter 4. Epitaxy of Strained Si/Si1–x Gex Heterostructures 209<br />Jean–Michel HARTMANN</p>
<p>4.1. Introduction 209</p>
<p>4.2. Engineering of the pMOSFET transistor channel using pseudomorphic SiGe layers 222</p>
<p>4.3. Engineering of the nMOSFET transistor channel using pseudomorphic Si1–yCy layers; SiGeC diffusion barriers <br />233</p>
<p>4.4. Epitaxy of Si raised sources and drains on ultra–thin SOI substrates 243</p>
<p>4.5. Epitaxy of recessed and raised SiGe:B sources and drains on ultra–thin SOI and SON substrates 248</p>
<p>4.6. Virtual SiGe substrates: fabrication of sSOI substrates and of dual c–Ge / t–Si channels 253</p>
<p>4.7. Thin or thick layers of pure Ge on Si for nano and opto–electronics 275</p>
<p>4.8. Devices based on sacrificial layers of SiGe 292</p>
<p>4.9. Conclusions and prospects 311</p>
<p>4.10. Bibliography 317</p>
<p>List of Authors 333</p>
<p>Index 335</p>