Subsecond Annealing of Advanced Materials

<p>The very early time.- Nanonet formation by constitutional supercooling of pulsed laser annealed, Mn-implanted germanium.- Metastable activation of dopants by solid phase epitaxial recrystallization.- Superconducting Ga-implanted Germanium.- Structural changes in SiGe/Si layers induced by fast crystallization.- Sub-nanosecond thermal spike-induced nanostructuring of thin solid films under swift heavy-ion (SHI) irradiation.- Pulsed-laser-induced epitaxial growth of silicon for three-dimensional integrated circuits.- Improvement of performance and cost of functional films using  large area laser RTP.- Pulsed laser dopant activation for semiconductors and solar cells.- Formation of high-quality µm-order-thick poly-Si films on glass substrates by flash lamp annealing.- Millisecond-range liquid-phase processing of  silicon-based hetero-nanostructures.- Radiation thermometry – sources of uncertainty during contactless temperature measurement.- Millisecond annealing for semiconductor device applications.- Low-cost and large-area electronics, roll-to-roll processing and  beyond.- Application of sub-second annealing for dilute ferromagnetic semiconductors.</p>