Tibor Grasser
Springer International Publishing
e druk, 2016
9783319359120
Hot Carrier Degradation in Semiconductor Devices
Specificaties
Paperback, blz.
|
Engels
Springer International Publishing |
e druk, 2016
ISBN13: 9783319359120
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Samenvatting
This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.
Specificaties
ISBN13:9783319359120
Taal:Engels
Bindwijze:paperback
Uitgever:Springer International Publishing
Inhoudsopgave
Part I: Beyond Lucky Electrons.- From Atoms to Circuits: Theoretical and Empirical Modeling of Hot Carrier Degradation.- The Energy Driven Hot Carrier Model.- Hot-Carrier Degradation in Decananometer.- Physics-based Modeling of Hot-carrier Degradation.- The Spherical Harmonics Expansion Method for Assessing Hot Carrier Degradation.- Recovery from Hot Carrier Induced Degradation Through Temperature Treatment.- Characterization of MOSFET Interface States Using the Charge Pumping Technique.- Part II: CMOS and Beyond.- Channel Hot Carriers in SiGe and Ge pMOSFETs.- Channel Hot Carrier Degradation and Self-Heating Effects in FinFETs.- Characterization and Modeling of High-Voltage LDMOS Transistors.- Compact modelling of the Hot-carrier Degradation of Integrated HV MOSFETs.- Hot-Carrier Degradation in Silicon-Germanium Heterojunction Bipolar Transistors.
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