Photomodulated Optical Reflectance

A Fundamental Study Aimed at Non-Destructive Carrier Profiling in Silicon

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Paperback, 204 blz. | Engels
Springer Berlin Heidelberg | 2012e druk, 2014
ISBN13: 9783642426865
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Springer Berlin Heidelberg 2012e druk, 2014 9783642426865
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One of the critical issues in semiconductor technology is the precise electrical characterization of ultra-shallow junctions. Among the plethora of measurement techniques, the optical reflectance approach developed in this work is the sole concept that does not require physical contact, making it suitable for non-invasive in-line metrology. This work develops extensively all the fundamental physical models of the photomodulated optical reflectance technique and introduces novel approaches that extend its applicability from dose monitoring towards detailed carrier profile reconstruction. It represents a significant breakthrough in junction metrology with potential for industrial implementation.

Specificaties

ISBN13:9783642426865
Taal:Engels
Bindwijze:paperback
Aantal pagina's:204
Uitgever:Springer Berlin Heidelberg
Druk:2012

Inhoudsopgave

Theory of Perturbation of the Reflectance.- Theory of Perturbation of the Refractive Index.- Theory of Carrier and Heat Transport in Homogeneously Doped Silicon.- Extension of the Transport Theory to Ultra-Shallow Doped Silicon Layers.- Assessment of the Model.- Application of the Model to Carrier Profling.

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        Photomodulated Optical Reflectance